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Semiconductors
dreamstime_grafner_36925314 | GLF Integrated Power
Semiconductors
Ideal Diodes Enhance System Efficiency in Wearable/Wireless Devices
GLF’s ideal diodes replace Schottkys with a low-loss MOSFET-based architecture to significantly reduce forward voltage drop and heat generation.
July 24, 2026
Keysight EDA
Test & Measurement
Keysight and WIN Semi Tackle GaN MMIC Design Risks
July 14, 2026
dreamstime_heinerle_32711796_2
Communications
Catching Up at the 2026 IMS Exhibition
June 24, 2026
iStock 1018092094
Semiconductors
PAs and LNAs Poised to Support E-band Systems
June 4, 2026
Dreamstime_Valentyn-Burlachenko_374442
Passive components
SOD-128 SiC Schottky Diodes Rated to 1,200 V
May 15, 2026
Dreamstime_Audrius-Merfeldas_213120704
Members Only
Can GaN-on-Si Meet Changing Needs in Military and Commercial RF Amplifiers?
Feb. 11, 2026
imec
Semiconductors
300-mm GeSi Wafers Hold 110-GHz Electro-Absorption Modules
Nov. 11, 2025
ID 195157091 | 5g Abstract © Kanawat | Dreamstime.com
Analog
High-Power GaN-on-SiC Amplifier Targets VSATs, Uplinks, 5G, and More
Sept. 4, 2025
imec
News
GaN-on-Si Semiconductors Compete with GaN-on-SiC
July 16, 2025
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