GaN RF Amplifiers Power L/S-Band Radar Systems

June 5, 2023

Startup’s diverse line of gallium-nitride devices will be on display at IMS 2023.

This article is part of our IMS 2023 coverage.

In IMS 2023 Booth 1316, you can get a glimpse of Gallium Semiconductor’s lineup of RF power amplifiers and discrete RF power transistors. For example, the GTH2r-1014150S is a pre-matched GaN-SiC L-band power amplifier that operates in the frequency range of 0.96-1.4 GHz. The device offers a pulsed output power of 150 W at 50-V bias, a saturated drain efficiency of over 72% (P2dB), and low pulse droop of only 0.02 dB, making it an excellent choice for high-power applications in L-band radar systems and satcom. It comes housed in a compact 6-pin, 6.5- × 7-mm DFN.

In addition to many other devices, Gallium Semi will display its amplifier evaluation board for the GTH2r-1014150S at 1.1-1.4 GHz. On the board is a Class AB amplifier circuit designed to demonstrate the amplifier in an optimal combination of output power and drain efficiency performance.

For more information, visit the company's website.

For more IMS 2023 coverage, visit our digital magazine.

About the Author

David Maliniak | Executive Editor, Microwaves & RF

I am Executive Editor of Microwaves & RF, an all-digital publication that broadly covers all aspects of wireless communications. More particularly, we're keeping a close eye on technologies in the consumer-oriented 5G, 6G, IoT, M2M, and V2X markets, in which much of the wireless market's growth will occur in this decade and beyond. I work with a great team of editors to provide engineers, developers, and technical managers with interesting and useful articles and videos on a regular basis. Check out our free newsletters to see the latest content.

You can send press releases for new products for possible coverage on the website. I am also interested in receiving contributed articles for publishing on our website. Use our contributor's packet, in which you'll find an article template and lots more useful information on how to properly prepare content for us, and send to me along with a signed release form.

About me:

In his long career in the B2B electronics-industry media, David Maliniak has held editorial roles as both generalist and specialist. As Components Editor and, later, as Editor in Chief of EE Product News, David gained breadth of experience in covering the industry at large. In serving as EDA/Test and Measurement Technology Editor at Electronic Design, he developed deep insight into those complex areas of technology. Most recently, David worked in technical marketing communications at Teledyne LeCroy, leaving to rejoin the EOEM B2B publishing world in January 2020. David earned a B.A. in journalism at New York University.