High-Power GaN-on-SiC Amplifier Targets VSATs, Uplinks, 5G, and More
United Monolithic Semiconductor (UMS) has dropped the latest in its family of high-power amplifiers —the CHA6357-98F, which covers 27 to 31 GHz. The bare-die, three-stage GaN device’s 5-W saturated output power translates to 23% and 24 dB of gain.
With applications in very-small-aperture terminal (VSAT) networks, satellite uplinks, 5G, and other radio-link scenarios, the amplifier delivers 33 dBm of linear power (37-dBm power output with +14 dBm of input power). It also offers an adjacent-channel power ratio of –30 dBc and is highly linear with low power consumption when operated with output power back-off enabled. The latter makes the device useful as a driver for downstream high-power amplifiers.
Other features of the CHA6357-98F include internal matching to 50 Ω at both the input and output, an integrated output-power detector, and ESD RF protection. The 2.5- × 1.6-mm2 die is manufactured on a robust GaN-on-SiC HEMT process.