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High-Power GaN-on-SiC Amplifier Targets VSATs, Uplinks, 5G, and More

Sept. 4, 2025
UMS’s latest bare-die amplifier covers 27 to 31 GHz and provides 5 W of saturated output, yielding 23% and 24 dB of gain.

United Monolithic Semiconductor (UMS) has dropped the latest in its family of high-power amplifiers —the CHA6357-98F, which covers 27 to 31 GHz. The bare-die, three-stage GaN device’s 5-W saturated output power translates to 23% and 24 dB of gain.

With applications in very-small-aperture terminal (VSAT) networks, satellite uplinks, 5G, and other radio-link scenarios, the amplifier delivers 33 dBm of linear power (37-dBm power output with +14 dBm of input power). It also offers an adjacent-channel power ratio of –30 dBc and is highly linear with low power consumption when operated with output power back-off enabled. The latter makes the device useful as a driver for downstream high-power amplifiers.

Other features of the CHA6357-98F include internal matching to 50 Ω at both the input and output, an integrated output-power detector, and ESD RF protection. The 2.5- × 1.6-mm2 die is manufactured on a robust GaN-on-SiC HEMT process.

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In his long career in the B2B electronics-industry media, David Maliniak has held editorial roles as both generalist and specialist. As Components Editor and, later, as Editor in Chief of EE Product News, David gained breadth of experience in covering the industry at large. In serving as EDA/Test and Measurement Technology Editor at Electronic Design, he developed deep insight into those complex areas of technology. Most recently, David worked in technical marketing communications at Teledyne LeCroy, leaving to rejoin the EOEM B2B publishing world in January 2020. David earned a B.A. in journalism at New York University.

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