RF Amplifier Design

Developed by Ampleon, this asymmetric Doherty RF power transistor offers moderate gain and high efficiency in a band centered at 2.5 GHz.

By leveraging advanced software, accurate results were obtained in the design, simulation, and testing of a power amplifier. This article is a study focused on unconditional stability...

Discrete GaN transistors, whether in die or packaged forms, offer high power density to boost pulsed signals in C-, L-, and S-band radars and communications applications.

Signal switching is critical in many RF applications, so it’s important for users to select the correct type of switch for their high-power apps.

This novel design method helps improve gain for the dual-fed DA by approximating gain using the Chebyshev polynomial.

Solid-state technology, mainly in the form of gallium-nitride transistors, is opening the door to more powerful, “tube-like” microwave power amplifiers.

Power-amplifier (PA) designers can take advantage of software that allows them to utilize complex load-pull data sets, thereby streamlining the design process.

This year, expect to see the RF/microwave industry produce solutions that push technological boundaries to meet new and emerging requirements.

The electrical and mechanical design approaches taken with high-power RF/microwave amplifiers depend on whether they are intended for pulsed or CW applications.

Requirements are somewhat different for circuit materials supporting RF/microwave power amplifiers compared to materials for low-noise amplifiers.

The choice of printed-circuit-board material can have an impact on the performance possible from an RF/microwave high-frequency LNA design.

This opening installment of an eight-part design series explains the concept of S-parameters and how they can be used to create basic transistor bias circuitry.