Aerospace and defense systems rely heavily on RF/microwave power amplifiers to send often complex-modulated signals to their destinations. Learn more about key specifications ...
Learn about a 4-way, 60-GHz PA designed and fabricated in a standard 90-nm CMOS process. The strategy broke up the amp into its basic components, optimized the model parameters...
For digital predistortion implementations, static quantitative data fails to capture many challenges, risks, and performance tradeoffs of real-world scenarios. Here's how to get...
By leveraging advanced software, accurate results were obtained in the design, simulation, and testing of a power amplifier. This article is a study focused on unconditional stability...
Discrete GaN transistors, whether in die or packaged forms, offer high power density to boost pulsed signals in C-, L-, and S-band radars and communications applications.
Solid-state technology, mainly in the form of gallium-nitride transistors, is opening the door to more powerful, “tube-like” microwave power amplifiers.
Power-amplifier (PA) designers can take advantage of software that allows them to utilize complex load-pull data sets, thereby streamlining the design process.
The electrical and mechanical design approaches taken with high-power RF/microwave amplifiers depend on whether they are intended for pulsed or CW applications.
Just as electrical energy must overcome resistance in a circuit, the flow of heat through a design relies on overcoming thermal obstacles before it can be safely dissipated.
This opening installment of an eight-part design series explains the concept of S-parameters and how they can be used to create basic transistor bias circuitry.