Since 1981, CTT has supplied customers worldwide with power amplifiers, frequency converters, frequency multipliers, transmitters, transceivers, and receivers within the frequency spectrum of 10 MHz to 100 GHz.
Since 1981 CTT has been supplying customers worldwide with power amplifiers, frequency converters, frequency multipliers, transmitters, transceivers, and receivers within the frequency spectrum of 10 MHz to 100 GHz. CTT’s products are designed to provide the best price versus performance combination for each customer, whether the end use is military, industrial or commercial.
Having built thousands of products with power levels that range from a few milliwatts to 1kW, CTT has become a leader in solid-state microwave amplification.
Incorporation of new Gallium Nitride (GaN) technology into solid-state power amplifiers (SSPAs) is our latest innovation and has brought dramatic results in amplifier performance. Over the past few years CTT has been continually optimizing its proprietary designs to take advantage of the unique characteristics of the latest GaN devices.
During a time when defense electronics technology is strong, the industry readies itself for the global adoption of 5G and electronically steered vehicles.
Solid-state technology, mainly in the form of gallium-nitride transistors, is opening the door to more powerful, “tube-like” microwave power amplifiers.
As the applications extrapolate for wireless devices and interest grows in millimeter-wave frequencies, the RF/microwave industry gathers together with great optimism for the ...
The electrical and mechanical design approaches taken with high-power RF/microwave amplifiers depend on whether they are intended for pulsed or CW applications.
Ready-to-use amplifier systems have gained acceptance for a growing number of applications, ranging from radar platforms to satellite-communications (satcom) networks.
Advanced semiconductor materials are vital to the technology growth of the armed forces, which hope to use both gallium nitride and graphene devices in future systems.
Held in Canada for only the second time in its history, the 2012 IEEE International Microwave Symposium (IMS) brought a large influx of microwave engineers to Montreal, Quebec...
Gallium-nitride (GaN) amplifiers are in abundance at the 2012 IMS, including at booth No. 2414 from CTT, Inc. The company recently announced a line of GaN power amplifiers for...
This family of GaN power amplifiers includes models operating across the full range from 2 to 18 GHz, with as much as 40 W saturated output power at frequencies through 10.5 GHz...
Over 600 exhibitors made the trip to the Baltimore Convention Center for this years IMS, bringing news of software, hardware, test equipment, and even company acquisitions.
Tactical radios were originally designed for voice communications, but now must handle data and video information as well. This switchover requires a common-data-link (CDL) solution...
Covering the frequency range of 1 to 18 GHz, the AMX/0118-3026 low-noise amplifier (LNA) serves a variety of RF and microwave applications. This compact LNA typically offers noise...
High-power RF and microwave signal levels are produced by both vacuum tubes and transistors in military systems, with demands for ever-increasing efficiency and smaller size.
