GaN Galore At 2012 IMS

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June 14, 2012

Gallium-nitride (GaN) amplifiers are in abundance at the 2012 IMS, including at booth No. 2414 from CTT, Inc. The company recently announced a line of GaN power amplifiers for use from 6.4 to 11.0 GHz with as much as 160 W output power from a single unit. The AGN and AGW series amplifiers are available in narrowband and wideband models where high output power is a requirement from a compact, light-weight housing.

The amplifiers rely on advanced coupler design and unique substrate material selection and can operate from a single voltage supply. A dozen models are available for use from 6.4 to 11.0 GHz in CEW mode. As an example, model AGN/105-4957-P provides 80 W minimum saturated output power with at least 57-dB gain from 9.5 to 10.5 GHz. It measures only 4.32 x 4.50 x 0.68 in. and draws 13.8 A from a +30-VDC supply.

About the Author

Jack Browne

Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.