GaN MMIC Amps Power 6 To 18 GHz

Dec. 19, 2013

A GaN-based MMIC power amplifier supplies 10 W output power from 6 to 18 GHz.

A high-power monolithic-microwave-integrated-circuit (MMIC) amplifier based on gallium-nitride (GaN) semiconductor technology has been developed for communications, test, and military applications from 6 to 18 GHz. Model HMC7149 provides 10-W output power from 6 to 18 GHz and typical small-signal gain of 20 dB. It provides +40-dBm saturated output power and draws 680 mA quiescent current from a +28-VDC supply. Model HMC7149, supplied as a die measuring just 3.4 × 4.5 × 0.1 mm, achieves 10-dB gain at saturated output power with ±0.5-dB gain flatness. Input/output return loss is typically 17 dB while power-added efficiency (PAE) is typically 22%.

Hittite Microwave Corp., 2 Elizabeth Dr., Chelmsford, MA 01824; (978) 250-3343, FAX: (978) 250-3373.

About the Author

Jack Browne | Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.