GaN Amp Powers 100 To 800 MHz

Oct. 8, 2009
Model SSPA 0.1-0.8-70 from Aethercomm is a gallium-nitride (GaN) power amplifier with 80 W typical output power at 3-dB compression from 100 to 800 MHz. Designed for harsh environments, it offers typical gain of 57 to 58 dB with power-added efficiency of ...

Model SSPA 0.1-0.8-70 from Aethercomm is a gallium-nitride (GaN) power amplifier with 80 W typical output power at 3-dB compression from 100 to 800 MHz. Designed for harsh environments, it offers typical gain of 57 to 58 dB with power-added efficiency of 45 to 60 percent across the operating band under saturated conditions. The maximum input and output VSWR is 2.0:1. The amplifier includes DC switching circuitry that enables and disables the RF devices inside the amplifier in typically 4000 ns for turn on and typically 1650 ns typical for turn off time. Standard features include reverse polarity protection, output short and open circuit protection, and over/under voltage protection. The amplifier, which operates from a +28-VDC supply, has a typical noise figure of 5 dB. It is housed in a module measuring 2.5 x 6.4 x 1.0 in. with SMA female connectors.

About the Author

Jack Browne | Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.

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