Integra Technologies

Milpitas, CA 95035


About Integra Technologies

Integra Technologies provides full-turnkey capabilities of die preparation, packaging, testing, and characterization of Hi-Rel semiconductor components and related value-added services.


1635 McCarthy Blvd.
Milpitas, CA 95035
(408) 618-8700

More Info on Integra Technologies

Integra Technologies and its full-turnkey capabilities of die preparation, packaging, testing and characterization of Hi-Rel semiconductor components and related value-added services, are uniquely qualified to serving mission-critical applications where dependability and failure-free performance are paramount. Mirrored capabilities in Assembly and Test provide redundancy and flexibility to maximize efficiency and accommodate customers’ specific geographic sourcing requirements. No other competitor in the industry offers the full range of end-to-end solutions to the Hi-Rel market that Integra Technologies does. Extensive breath of services remains a key differentiator, as customers continue to consolidate their supply base and seek vendors that can provide a one-stop-shop platform.

Locked on a Go-To-Market (GTM) Strategy built on six Value Streams, servicing the Full Hi-Rel Semiconductor Value Chain. In January 2018, we launched review of Integra Technologies GTM with the explicit goal of positioning Integra Technologies to deliver solid customer experience by focusing the entire company on promoting its highly differentiated capabilities and full-turnkey solution to its full potential. This new GTM positions Integra Technologies as the leading single-source to the Aerospace & Defense, Space, Semiconductor and Medical customers.

Articles & News

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GaN Devices Raising the Output-Power Performance Bar

March 24, 2021
Discrete GaN transistors, whether in die or packaged forms, offer high power density to boost pulsed signals in C-, L-, and S-band radars and communications applications.
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Bump Up Semiconductor Efficiency with GaN

March 31, 2020
GaN is a semiconductor material that’s well-suited for the fabrication of high-power, high-frequency, as well as ultraviolet LED devices.
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2019 IMS in Boston Opens With High Enthusiasm

June 5, 2019
Energy levels were high on the show floor of the 2019 IEEE IMS, as exhibitors reported on strong sales in defense and aerospace markets as well as for many mmWave devices.
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Dealing with Differences in RF Semiconductors

Feb. 4, 2019
The characteristics of different substrates and device architectures make it possible to reach many speeds and frequencies with modern semiconductor devices and their packages...
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Has GaN Pushed LDMOS into Irrelevance?

Jan. 10, 2019
With gallium-nitride technology getting all of the hype, it’s worthwhile to look at where LDMOS now stands.
Integra Technologies
This GaN-on-SiC HEMT delivers 120 W pulsed output power at 1,030 and 1,090 MHz for IFF avionics systems.

GaN-on-SiC Transistor Powers IFF Systems

Nov. 8, 2018
A GaN-on-SiC HEMT provides 120-W pulsed output power at 1,030 and 1,090 MHz for IFF avionics systems.

All content from Integra Technologies

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Editor Columns

Does Your Company’s Website Do It Justice?

Oct. 1, 2018
RF/microwave companies are pushing out new websites to meet modern business needs. How do they stack up against your firm’s site?
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Radar Now Travels with the Troops

Sept. 6, 2018
Various radars, including weather radars, are becoming more portable thanks to solid-state power, which enables systems to be designed with smaller footprints.
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High Power Leaves its Mark on IMS

June 22, 2018
IMS 2018 showcased the latest in high-power RF capability, with multiple companies demonstrating an array of performance breakthroughs.
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High-Power Devices Have Become a High-Stakes Market

June 2, 2018
Suppliers of these devices are all in, not only targeting applications like wireless communications and radar systems, but also the emerging RF energy arena.
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Recognize the Flavors of RF Power Transistors

May 31, 2018
This technical brief focuses in on RF power transistor technologies, helping readers to determine the best choice when designing a high-power amplifier.
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Philadelphia Opens Its Doors to 2018 IMS

May 22, 2018
As the applications extrapolate for wireless devices and interest grows in millimeter-wave frequencies, the RF/microwave industry gathers together with great optimism for the ...
(Image courtesy of Corwil).

Integra Buys Corwil to Expand Chip Assembly and Testing

Sept. 18, 2017
With the deal, Integra moves into die prep and assembly for high-reliability chips used in satellites, medical gadgets, and factories.
(Image courtesy of Integra).

GaN Avionics Transistor Delivers 1200 W at L-Band

May 23, 2016
Based on GaN-on-SiC semiconductor technology, the Class AB high electron mobility transistor is capable of 1200 W output power and 17 dB gain from 1030 to 1090 MHz. See it at ...
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GaN Transistor Powers S-Band Radar

Oct. 21, 2013
A GaN high-electron-mobility-transistor (HEMT) device provides high pulsed output power for S-band systems.