Integra Technologies provides full-turnkey capabilities of die preparation, packaging, testing, and characterization of Hi-Rel semiconductor components and related value-added services.
Integra Technologies and its full-turnkey capabilities of die preparation, packaging, testing and characterization of Hi-Rel semiconductor components and related value-added services, are uniquely qualified to serving mission-critical applications where dependability and failure-free performance are paramount. Mirrored capabilities in Assembly and Test provide redundancy and flexibility to maximize efficiency and accommodate customers’ specific geographic sourcing requirements. No other competitor in the industry offers the full range of end-to-end solutions to the Hi-Rel market that Integra Technologies does. Extensive breath of services remains a key differentiator, as customers continue to consolidate their supply base and seek vendors that can provide a one-stop-shop platform.
Locked on a Go-To-Market (GTM) Strategy built on six Value Streams, servicing the Full Hi-Rel Semiconductor Value Chain. In January 2018, we launched review of Integra Technologies GTM with the explicit goal of positioning Integra Technologies to deliver solid customer experience by focusing the entire company on promoting its highly differentiated capabilities and full-turnkey solution to its full potential. This new GTM positions Integra Technologies as the leading single-source to the Aerospace & Defense, Space, Semiconductor and Medical customers.
Discrete GaN transistors, whether in die or packaged forms, offer high power density to boost pulsed signals in C-, L-, and S-band radars and communications applications.
Energy levels were high on the show floor of the 2019 IEEE IMS, as exhibitors reported on strong sales in defense and aerospace markets as well as for many mmWave devices.
The characteristics of different substrates and device architectures make it possible to reach many speeds and frequencies with modern semiconductor devices and their packages...
Various radars, including weather radars, are becoming more portable thanks to solid-state power, which enables systems to be designed with smaller footprints.
Suppliers of these devices are all in, not only targeting applications like wireless communications and radar systems, but also the emerging RF energy arena.
This technical brief focuses in on RF power transistor technologies, helping readers to determine the best choice when designing a high-power amplifier.
As the applications extrapolate for wireless devices and interest grows in millimeter-wave frequencies, the RF/microwave industry gathers together with great optimism for the ...
Based on GaN-on-SiC semiconductor technology, the Class AB high electron mobility transistor is capable of 1200 W output power and 17 dB gain from 1030 to 1090 MHz. See it at ...
Discrete power transistors support RF and microwave large-signal applications with a variety of technologies, ranging from older silicon semiconductors to mixes of materials using...
TRANSISTOR OMISSION We read your article "Transistors Energize Solid-State Amplifiers" in the April edition of Microwaves & RF with both interest and disbelief, as Integra Technologies...
From AESA to UASs, current and future airborne radar systems are providing more intelligence in smaller and lighter forms while withstanding harsher environments.
Power transistors continue to gain in performance at RF and microwave frequencies, drawing upon numerous semiconductor materials for improved power and efficiency.
To serve S-band radar systems, a new miniaturized power amplifier (PA) spans 2.7 to 3.1 GHz. Under 300 s/10- percent pulsed operation, it can be used to supply a minimum of 130...
High-power RF and microwave signal levels are produced by both vacuum tubes and transistors in military systems, with demands for ever-increasing efficiency and smaller size.
A pair of pallet amplifiers is available for use in S-band and L-band radar systems. The IBP2729MH300 is a 50- -matched, high-power pulsed pallet amplifier for S-band systems....
Integra Technologies recently added the ILD1011M550HV to its high-power LDMOS transistors for L-band avionics applications. It offers a minimum of 550 watts of output power with...
With the debut of the ILD1011M550HV, Integra Technologies, Inc. is expanding its family of high-power LDMOS transistors for L-band avionics applications. The ILD1011M550HV offers...
As commercial and military solid-state amplifier designers strive for higher power levels from their assemblies, device developers are being asked for more power per RF/microwave...
Integra Technologies has developed a miniature S-band power amplifier ideal for radar applications. Internally matched to 50 ohms, the tiny amplifier provides as much as 18 W ...
