Integra Technologies provides full-turnkey capabilities of die preparation, packaging, testing, and characterization of Hi-Rel semiconductor components and related value-added services.
Integra Technologies and its full-turnkey capabilities of die preparation, packaging, testing and characterization of Hi-Rel semiconductor components and related value-added services, are uniquely qualified to serving mission-critical applications where dependability and failure-free performance are paramount. Mirrored capabilities in Assembly and Test provide redundancy and flexibility to maximize efficiency and accommodate customers’ specific geographic sourcing requirements. No other competitor in the industry offers the full range of end-to-end solutions to the Hi-Rel market that Integra Technologies does. Extensive breath of services remains a key differentiator, as customers continue to consolidate their supply base and seek vendors that can provide a one-stop-shop platform.
Locked on a Go-To-Market (GTM) Strategy built on six Value Streams, servicing the Full Hi-Rel Semiconductor Value Chain. In January 2018, we launched review of Integra Technologies GTM with the explicit goal of positioning Integra Technologies to deliver solid customer experience by focusing the entire company on promoting its highly differentiated capabilities and full-turnkey solution to its full potential. This new GTM positions Integra Technologies as the leading single-source to the Aerospace & Defense, Space, Semiconductor and Medical customers.
Discrete GaN transistors, whether in die or packaged forms, offer high power density to boost pulsed signals in C-, L-, and S-band radars and communications applications.
Energy levels were high on the show floor of the 2019 IEEE IMS, as exhibitors reported on strong sales in defense and aerospace markets as well as for many mmWave devices.
The characteristics of different substrates and device architectures make it possible to reach many speeds and frequencies with modern semiconductor devices and their packages...
Various radars, including weather radars, are becoming more portable thanks to solid-state power, which enables systems to be designed with smaller footprints.
Suppliers of these devices are all in, not only targeting applications like wireless communications and radar systems, but also the emerging RF energy arena.
This technical brief focuses in on RF power transistor technologies, helping readers to determine the best choice when designing a high-power amplifier.
As the applications extrapolate for wireless devices and interest grows in millimeter-wave frequencies, the RF/microwave industry gathers together with great optimism for the ...
Based on GaN-on-SiC semiconductor technology, the Class AB high electron mobility transistor is capable of 1200 W output power and 17 dB gain from 1030 to 1090 MHz. See it at ...