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GaN Transistor Powers S-Band Radar

Oct. 21, 2013
A GaN high-electron-mobility-transistor (HEMT) device provides high pulsed output power for S-band systems.

Model IGN2729M250C is an internally impedance-matched, gallium-nitride (GaN) high-electron-mobility-transistor (HEMT) device suitable for S-band radar applications from 2.7 to 2.9 GHz. It delivers at least 250 W output power when operating with a 300-μs pulse and 10% pulse duty cycle, with typically 10-dB gain across the frequency range, with an average output-power rating of 25 W. The transistor is specified for Class-AB bias conditions. In addition, for applications from 2.7 to 3.1 GHz, the firm recently introduced their model IGN2731M200 GaN-on-silicon-carbide transistors with rating of 200 W output power for 300-μs pulses at a 44% duty cycle. The depletion-mode device is also internally impedance matched and specified for use under Class AB bias conditions. It is supplied in a compact housing measuring 1.070 x 0.400 in. (27.18 x 10.16 mm).

Integra Technologies, Inc., 321 Coral Circle, El Segundo, CA 90245; (310) 606-0855, FAX: (310) 606-0865.

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About the Author

Jack Browne | Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.

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