GaN Avionics Transistor Delivers 1200 W at L-Band

May 23, 2016

Based on GaN-on-SiC semiconductor technology, the Class AB high electron mobility transistor is capable of 1200 W output power and 17 dB gain from 1030 to 1090 MHz. See it at IMS Exhibition Booth 850.

Jack Browne

Related To: Microwaves & RF

The 2016 IMS exhibition floor provides an opportunity to assess the current state of the art in many different high-frequency technologies, including high-power semiconductors, such as gallium nitride (GaN) pulsed transistors. Claiming the highest power in the industry, Integra Technologies Inc. is showing its model IGN1011L1200 pulsed transistor for ELM Mode S avionics applications at IMS Exhibition Booth 850. Based on second-generation gallium-nitride-on-silicon-carbide (GaN-on-SiC) semiconductor technology, the Class AB high electron mobility transistor (HEMT) is capable of 1200 W output power and 17 dB gain from 1030 to 1090 MHz when fed with a typical input power level of 25 W. The GaN power transistor operates at +50-V dc with 75% typical drain efficiency and is supplied in a rugged metal-ceramic package. The depletion-mode device requires negative gate voltage and bias sequencing.

About the Author

Jack Browne | Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.