2023 Applied Power Electronics Conference (APEC)

The compactness of a new series of SiC FET in TOLL packages gives a boost to power density.

An integrated EMI shield enables the regulator module to deliver low noise and substantially reduced output ripple voltage.

TI is highlighting its new 650-V GaN half-bridge IC for power adapters at APEC 2023.

Often an afterthought in board- and system-level design, power can literally trip you up. Fortunately, there are resources for learning like this week’s APEC in Orlando.

These EMI filter ICs enable engineers to design smaller, lighter, and more affordable power supplies while optimizing system performance, efficiency, and reliability.

1.5-MHz current sensors support fast-switching SiC and GaN power stages in data centers, motor drives and inverters, and EV batteries and charging infrastructure.

On display at APEC, the new GaN power IC is designed for USB Type-C PD adapters that support up to 100 W.

The AOZ13937DI sink and AOZ15333DI source protection switches pave the way for USB Type-C EPR 3.1 designs delivering up to 140 W.

The company’s manufacturing milestone represents the start of commercialization and technology integration with key product and semiconductor partners.

Infineon is seeking to expand its power electronics ecosystem through an acquisition of rival GaN Systems.