High-Power Amp Covers 27.5 to 31 GHz in Satcom, 5G Apps
United Monolithic Semiconductors' CHA8265-98F is a three-stage, high-power amplifier operating between 27.5 and 31 GHz. It typically provides 25 W of saturated output power associated to 30% of power-added efficiency (PAE) at a 25-V drain voltage. The amplifier delivers 10 W of linear power with a –25-dBc IMD3 and PAE better than 25%.
The device, dedicated to satellite communications and 5G applications, is well-suited for a wide range of microwave applications and systems. The circuit is manufactured on a robust GaN-on-SiC (gallium nitride-on-silicon carbide) HEMT process and comes in bare-die form with a chip size of 3.6 × 3.6 mm2.
Amplifier input and output are matched at a 50-Ω impedance. The drain bias range, from 18 to 25 V, offers a saturated output power from 15 to 25 W.
Learn more about RF power amplifiers
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David Maliniak
Executive Editor, Microwaves & RF
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In his long career in the B2B electronics-industry media, David Maliniak has held editorial roles as both generalist and specialist. As Components Editor and, later, as Editor in Chief of EE Product News, David gained breadth of experience in covering the industry at large. In serving as EDA/Test and Measurement Technology Editor at Electronic Design, he developed deep insight into those complex areas of technology. Most recently, David worked in technical marketing communications at Teledyne LeCroy, leaving to rejoin the EOEM B2B publishing world in January 2020. David earned a B.A. in journalism at New York University.