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GaN Systems Rolls Out ADS Models for ISM RF Power Transistors

June 3, 2022

The company's models for the PathWave Advanced Design System make it easier for designers to implement high-power GaN power transistors in applications from 2 to 250 kW for operation in the ISM bands.

David Maliniak

Related To: Microwaves & RF

The Overview

GaN Systems now offers PathWave Advanced Design System (ADS) models of its GaN transistors, which makes it easier for designers to work with its devices in RF power markets traditionally dominated by silicon LDMOS and other RF power-transistor technologies.

Who Needs It & Why?

GaN power transistors have applications in a broad range of end products operating within the ISM bands. The ADS models now available from GaN Systems will aid designers working in the 13- to 81-GHz frequency range in deploying these GaN devices. They deliver high power output and efficiency while reducing size and cost compared to devices in silicon LDMOS and similar technologies.

Under the Hood

GaN Systems’ power transistors, such as its GS66502B and GS66508B, have been implemented in several applications. Capable of operating up to 100 MHz and at power levels from 2 to 250 kW, applications include RF heating and drying systems, high-frequency radar systems, CO₂ lasers, RF defrosters, communication jammers, and plasma generators. With RF power, as frequencies increase, so too do the tools required, because the ADS models need to ensure high reliability of simulation results prior to final design.

About the Author

David Maliniak | Executive Editor, Microwaves & RF

I am Executive Editor of Microwaves & RF, an all-digital publication that broadly covers all aspects of wireless communications. More particularly, we're keeping a close eye on technologies in the consumer-oriented 5G, 6G, IoT, M2M, and V2X markets, in which much of the wireless market's growth will occur in this decade and beyond. I work with a great team of editors to provide engineers, developers, and technical managers with interesting and useful articles and videos on a regular basis. Check out our free newsletters to see the latest content.

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About me:

In his long career in the B2B electronics-industry media, David Maliniak has held editorial roles as both generalist and specialist. As Components Editor and, later, as Editor in Chief of EE Product News, David gained breadth of experience in covering the industry at large. In serving as EDA/Test and Measurement Technology Editor at Electronic Design, he developed deep insight into those complex areas of technology. Most recently, David worked in technical marketing communications at Teledyne LeCroy, leaving to rejoin the EOEM B2B publishing world in January 2020. David earned a B.A. in journalism at New York University.