GaN Systems now offers PathWave Advanced Design System (ADS) models of its GaN transistors, which makes it easier for designers to work with its devices in RF power markets traditionally dominated by silicon LDMOS and other RF power-transistor technologies.
Who Needs It & Why?
GaN power transistors have applications in a broad range of end products operating within the ISM bands. The ADS models now available from GaN Systems will aid designers working in the 13- to 81-GHz frequency range in deploying these GaN devices. They deliver high power output and efficiency while reducing size and cost compared to devices in silicon LDMOS and similar technologies.
Under the Hood
GaN Systems’ power transistors, such as its GS66502B and GS66508B, have been implemented in several applications. Capable of operating up to 100 MHz and at power levels from 2 to 250 kW, applications include RF heating and drying systems, high-frequency radar systems, CO2 lasers, RF defrosters, communication jammers, and plasma generators. With RF power, as frequencies increase, so too do the tools required, because the ADS models need to ensure high reliability of simulation results prior to final design.