Car Charging Station 638921204 5e6ff604d57e2

STMicroelectronics, TSMC Join Forces on GaN Adoption

March 16, 2020
Combining their respective expertise in automotive applications and GaN process technology, ST Microelectronics and TSMC look to broaden adoption of wide-bandgap devices.

In an effort to accelerate adoption of gallium nitride (GaN) process technology, STMicroelectronics and TSMC are teaming to produce a portfolio of power GaN and GaN IC devices. These devices will leverage GaN’s wide bandgap to achieve improved energy efficiency in power-conversion applications.

GaN is a wide bandgap semiconductor material which offers significant benefits over traditional silicon-based semiconductors for power applications. These benefits include greater energy efficiency at higher power, leading to a substantial reduction in parasitic power losses. GaN technology also allows the design of more compact devices. Additionally, GaN-based devices switch at speeds as much as 10X faster than silicon-based devices while operating at higher peak temperatures. Such robust and intrinsic material characteristics make GaN well-suited for broad-based adoption in evolving automotive, industrial, telecom, and specific consumer applications across both the 100V and the 650V clusters.

Power GaN and GaN IC technology-based products will enable ST to provide solutions for medium and high-power applications with better efficiency compared to silicon technologies on the same topologies, including automotive converters and chargers for hybrid and electric vehicles. Power GaN and GaN IC technologies will help accelerate the megatrend of the electrification of consumer and commercial vehicles.

ST expects the delivery of first samples of power GaN discrete devices to key customers later this year, followed by GaN IC products within a few months.

ST Microelectronics,  www.st.com; TSMC, www.tsmc.com

About the Author

David Maliniak | Executive Editor, Microwaves & RF

I am Executive Editor of Microwaves & RF, an all-digital publication that broadly covers all aspects of wireless communications. More particularly, we're keeping a close eye on technologies in the consumer-oriented 5G, 6G, IoT, M2M, and V2X markets, in which much of the wireless market's growth will occur in this decade and beyond. I work with a great team of editors to provide engineers, developers, and technical managers with interesting and useful articles and videos on a regular basis. Check out our free newsletters to see the latest content.

You can send press releases for new products for possible coverage on the website. I am also interested in receiving contributed articles for publishing on our website. Use our contributor's packet, in which you'll find an article template and lots more useful information on how to properly prepare content for us, and send to me along with a signed release form. 

About me:

In his long career in the B2B electronics-industry media, David Maliniak has held editorial roles as both generalist and specialist. As Components Editor and, later, as Editor in Chief of EE Product News, David gained breadth of experience in covering the industry at large. In serving as EDA/Test and Measurement Technology Editor at Electronic Design, he developed deep insight into those complex areas of technology. Most recently, David worked in technical marketing communications at Teledyne LeCroy, leaving to rejoin the EOEM B2B publishing world in January 2020. David earned a B.A. in journalism at New York University.

Sponsored Recommendations

Ultra-Low Phase Noise MMIC Amplifier, 6 to 18 GHz

July 12, 2024
Mini-Circuits’ LVA-6183PN+ is a wideband, ultra-low phase noise MMIC amplifier perfect for use with low noise signal sources and in sensitive transceiver chains. This model operates...

Turnkey 1 kW Energy Source & HPA

July 12, 2024
Mini-Circuits’ RFS-2G42G51K0+ is a versatile, new generation amplifier with an integrated signal source, usable in a wide range of industrial, scientific, and medical applications...

SMT Passives to 250W

July 12, 2024
Mini-Circuits’ surface-mount stripline couplers and 90° hybrids cover an operational frequency range of DC to 14.5 GHz. Coupler models feature greater than 2 decades of bandwidth...

Transformers in High-Power SiC FET Applications

June 28, 2024
Discover SiC FETs and the Role of Transformers in High-Voltage Applications