Rad-Hard GaN HEMT Driver Targets High-Rel Space App
Designed for satellite and other high-rel space applications where performance and long-term operational integrity are critical, Infineon Technologies' RIC70115 radiation-hardened GaN HEMT driver supports both silicon and GaN MOSFET designs in low- and high-side configurations. It ensures safe operation across varying bias-voltage conditions.
Features include an independent Miller clamp function that prevents parasitic-induced turn-on while maintaining switching speed, reducing switching losses and improving efficiency. A truly differential input logic stage delivers high noise immunity by rejecting common-mode noise and mitigating the effects of EMI and RFI. An integrated LDO generates a tightly regulated 4.8-V drive voltage from a 5- or 12-V source, minimizing the need for external regulation components.
The RIC70115 meets MIL-PRF-38535 across an operating temperature range from –55 to 125°C. It's radiation-hardened to a total ionizing dose rating of up to 100 krad (Si) and has been characterized for single event effects up to a linear energy transfer (LET) of 81.9 MeV·cm²/mg. These attributes provide the radiation performance margins required for hi-rel applications.
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About the Author
Alix Paultre
Editor-at-Large, Microwaves & RF
Alix is Editor-at-Large for Microwaves & RF.
An Army veteran, Alix Paultre was a signals intelligence soldier on the East/West German border in the early ‘80s, and eventually wound up helping launch and run a publication on consumer electronics for the U.S. military stationed in Europe. Alix first began in this industry in 1998 at Electronic Products magazine, and since then has worked for a variety of publications, most recently as Editor-in-Chief of Power Systems Design.
Alix currently lives in Wiesbaden, Germany.