Through-Hole SiC MOSFETs Inspire Direct Cooling
Providing direct-cooled thermal management via a reflow-compatible, thermal pad, Navitas Semiconductor's UHV‑TO‑247‑4‑ISO-packaged power semiconductors offer significantly improved power density, reliability, and efficiency. Its integrated aluminum-nitride, substrate-based isolation reduces electromagnetic coupling, allowing for faster switching and lower EMI management.
With more than 12-mm pin-to-pin creepage and over 6,000 V of isolation, the package is purpose‑built for 1,200- to 3,300-V GeneSiC SiC MOSFETs. It delivers module‑like performance in a compact discrete form factor, eliminating the need for external high-voltage isolation while improving thermal and EMI performance.
Equipped with an isolated, reflow-compatible thermal pad, the package can be mounted directly to liquid- or air-cooled heatsinks for up to 150% increased power-dissipation capability. It's compatible with the TO‑247‑4 form factor and lead geometry, easing system integration with no redesign for superior performance and lower total system cost.
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About the Author
Alix Paultre
Editor-at-Large, Microwaves & RF
Alix is Editor-at-Large for Microwaves & RF.
An Army veteran, Alix Paultre was a signals intelligence soldier on the East/West German border in the early ‘80s, and eventually wound up helping launch and run a publication on consumer electronics for the U.S. military stationed in Europe. Alix first began in this industry in 1998 at Electronic Products magazine, and since then has worked for a variety of publications, most recently as Editor-in-Chief of Power Systems Design.
Alix currently lives in Wiesbaden, Germany.