SiC MOSFETs Offer Low On-Resistance at High Temps
ROHM's latest EcoSiC 5th-generation SiC MOSFETs, which feature lower on-resistance at high temperatures than legacy solutions, are optimized for high‑efficiency power applications. According to the company, the newly developed devices achieve industry-leading low loss through structural enhancements and manufacturing process optimization.
The on-resistance is reduced by approximately 30% during high-temperature operation (Tj = 175°C) compared to conventional 4th-generation products under the same breakdown voltage and chip size conditions. Going forward, ROHM plans to expand its 5th-generation SiC MOSFET lineup with additional breakdown voltage and package options.
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About the Author
Alix Paultre
Editor-at-Large, Microwaves & RF
Alix is Editor-at-Large for Microwaves & RF.
An Army veteran, Alix Paultre was a signals intelligence soldier on the East/West German border in the early ‘80s, and eventually wound up helping launch and run a publication on consumer electronics for the U.S. military stationed in Europe. Alix first began in this industry in 1998 at Electronic Products magazine, and since then has worked for a variety of publications, most recently as Editor-in-Chief of Power Systems Design.
Alix currently lives in Wiesbaden, Germany.