With significantly improved convergence and faster simulation performance, ROHM's latest Level 3 (L3) SPICE models address demanding design challenges. In circuit design, simulation accuracy is critical. Earlier Level 1 SPICE models for SiC MOSFETs could replicate key device characteristics, but fell short in areas such as simulation convergence, along with prolonged computation times, revealing the need for an upgrade.
These L3 models use a clean approach that addresses both computational stability and switching waveform accuracy while extensively reducing simulation time compared to the L1 models. This enables an accurate transient analysis of the entire circuit at a higher speed, streamlining device evaluation and loss assessment in the design. ROHM has released 37 L3 models for its fourth-generation SiC MOSFETs, but the L1 models will continue to be available.
