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GaN Generates Power on IMS Exhibition Floor

June 5, 2017
GaN has become the semiconductor material of choice for solid-state, high-power applications from RF through millimeter-wave frequencies.

Gallium nitride (GaN) is now the semiconductor substrate material of choice for high-power-density transistors and monolithic microwave integrated circuits (MMICs). It comes as no surprise, then, that the 2017 IMS exhibition will feature a healthy cross-section of GaN-based semiconductors from leading suppliers. MACOM Technology Solutions, at booth No. 1312, will show the highly regarded Nitronex NPT1010B GaN-on-silicon +28-V dc power transistor with capability of 100 W CW output power at 900 MHz for wireless base stations.

GaN semiconductor technology offers high output power at RF through millimeter-wave frequencies. (Courtesy of NXP)

In addition to a full complement of GaN devices on display at NXP Semiconductors’ booth No. 1132 (see figure), representatives will offer technical presentations on the current state of GaN-based MMICs and how GaN power-transistor technology compares to other high-frequency semiconductor technologies, including gallium arsenide (GaAs) and silicon germanium (SiGe). In addition, a presentation during a morning session on amplifiers will feature the design of a two-stage Doherty amplifier with 4G and 5G wireless network base stations.

Additional suppliers of GaN devices present on the 2017 IMS exhibition floor include Infineon with its GaN-on-SiC technology (booth No. 1214), Microsemi (booth No. 810), and Sumitomo Electric Device Innovations (booth No. 1239).

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