GaN Transistors Fit Into Plastic

June 2, 2014
GaN transistors in plastic packages support applications at S-, C-, and X-band frequencies.

Among the many gallium nitride (GaN) devices on display at the Cree RF booth (No. 433) at the 2014 IMS will be a family of high-electron-mobility-transistor (HEMT) devices in dual-flat-no-lead (DFN) plastic packages. Suitable for use at power levels under 100 W, these transistors are aimed at applications at S-, C-, and X-band frequencies, including commercial radar systems and wireless data links. In addition to its GaN semiconductor devices in the IMS Exhibition, Cree RF will be participating in the IMS 2014 STEM Program, which introduces a group of about 50 students to RF/microwave technology with a goal of fostering possible careers for them in this industry. Cree RF is also playing a major part in the 15th annual IEEE Wireless and Microwave Technology Conference (WAMICON) on Friday, June 6th, with Cree’s strategic business development manager, Ray Pengelly, serving as WAMICON conference chair.

About the Author

Jack Browne | Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.

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