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Cree Gives GaN Report At India EW Conference

Feb. 18, 2014
A leading supplier of GaN technology explains how these high-power devices serve counter-IED applications.

One of the foremost supporters of gallium-nitride (GaN) RF technology is Cree RF. The firm's Director of Sales and Marketing for RF Products, Tom Dekker, will be reporting on its offerings this coming Thursday, Feb. 20—specifically, on how GaN can work with counter improvised explosive devices (C-IEDs). Dekker is scheduled to present “The Impact of GaN RF Technology on C-IED” at the Third International Conference on Electronic Warfare (EWCI 2014) in Bangalore, India.

The technical conference has been organized by the Association of Old Crows (AOC) India. The Cree presentation will explain how GaN field-effect transistors (FETs) provide greater benefits than other high-power RF semiconductor technologies, including higher output-power densities than available silicon or gallium arsenide (GaAs) high-frequency transistors.

About the Author

Jack Browne | Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.

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