GaN Transistors Power L-Band Radar

Sept. 14, 2013
These GaN transistors provide 250 and 500 W output power for 1.2-to-1.4-GHz L-band radar systems.

Models CGHV14250 and CGHV14500 are gallium-nitride (GaN) high-electron-mobility-transistor (HEMT) devices capable of 250 and 500 W output power in 1.2-to-1.4-GHz L-band radar amplifiers. The transistors are usable in applications from UHF through 1800 MHz, including in tactical air navigation systems (TACAN), identification: friend or foe (IFF) systems, and other military telemetry systems. The 250-W model CGHV14250 offers 330 W typical output power, with 18-dB power gain and 77% typical drain efficiency. The 500-W CGHV14500 provides 500 W typical output power, with 17-dB power gain and 70% typical drain efficiency. Both devices feature 0.3-dB pulsed amplitude droop. Internally impedance matched on the input ports, these devices are based on the firm’s 50-V, 0.4-μm GaN-on-SiC foundry process and are supplied in ceramic/metal flange and pill packages.

Cree, Inc., 4600 Silicon Dr., Durham, NC 27703; (866) 924-3645.

About the Author

Jack Browne | Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.

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