MACOM Extends PIN Diodes To 100 W

June 3, 2013

A series of PIN diodes handle power levels as high as 100 W to 12 GHz.

Related To:

Among its many components on display at IMS booth No. 930 in Seattle, MACOM Technology Solutions will be demonstrating its capabilities in high-power broadband shunt PIN diodes. Suitable for high-power switching applications, these shunt PIN diodes are capable of handling power levels to 100 W at frequencies to 6 GHz, and they are usable for applications through 12 GHz. As an example, model MADP-011028-14150T is a silicon shunt PIN diode designed for applications from 50 MHz to 12 GHz. It is rated for minimum breakdown voltage of 200 V and maximum power dissipation of 4.3 W. The diodes are supplied in plastic packages measuring just 1.5 x 1.2 mm. According to Product Manager, Paul Wade, “This family of shunt PIN diodes offers an excellent combination of broadband performance, ease of use and low cost.” To learn more, visit M/A-COM Technology Solutions at IMS booth No. 930.

Editor's Note: For more show coverage, be sure to visit Microwaves & RF's IMS 2013 page.

About the Author

Jack Browne | Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.