Doherty Amp Boosts China’s LTE Signals

March 27, 2013
A miniature but robust power amplifier based on a discrete GaN device has been developed for LTE microcellular base stations.

One of the leading high-frequency semiconductor developers, TriQuint Semiconductor, recently unveiled a GaN-based Doherty power amplifier for China’s Long-Term-Evolution (LTE) microcellular applications. The amplifier, which is based on the firm’s model T1G6001528-Q3 discrete GaN power transistor, was unveiled during the March 12-14, 2013 technical conference at the Electronic Design Innovation Conference (EDI CON) in Beijing, China.

The compact GaN power amplifier delivers +38.5-dBm average output power with peak saturated output power of better than +46 dBm from 2.62 to 2.69 GHz. The amplifier, which measures just 30 × 70 mm, provides more than 15-dB gain and is designed for two-carrier operation with adjacent-channel-power-ratio (ACPR) performance of better than -50 dBc.

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