GaN Device Drives 100 W At 1 GHz

Feb. 20, 2013
A packaged GaN HEMT device generates 100 W output power from 100 MHz to 1 GHz under pulsed or CW conditions.

Specified for Class AB operation, model IGN0110UM100 from Integra Technologies is a dual-lead packaged gallium-nitride (GaN) high-electron-mobility-transistor (HEMT) device capable of at least 100 W continuous-wave (CW) output power from 100 MHz to 1 GHz. It provides 12-dB gain over that range and under those conditions, and can also drive high output-power levels with pulsed signals. It maintains excellent spectral purity into all phases at load mismatches as severe as a 3.0:1 VSWR. All devices are 100% screened using large-signal parameters in a broadband precision test fixture.

Integra Technologies, Inc., 321 Coral Circle, El Segundo, CA 90245; (310) 606-0855, FAX: (310) 606-0865, e-mail: [email protected],

About the Author

Jack Browne | Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.

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