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GaN Amplifier Boosts 6 To 18 GHz

June 13, 2012
Model AML618P4015 is a gallium-nitride (GaN) power amplifier designed to provide 20 W output power from 6 to 18 GHz. The high-power-density amplifier achieves power-added efficiency (PAE) of typically 12% in a package measuring just 2.45 x 2.09 x 0.41 ...
Model AML618P4015 is a gallium-nitride (GaN) power amplifier designed to provide 20 W output power from 6 to 18 GHz. The high-power-density amplifier achieves power-added efficiency (PAE) of typically 12% in a package measuring just 2.45 x 2.09 x 0.41 in. It achieves 40-dB minimum small-signal gain across its full operating bandwidth and operates from a +32-VDC supply. The rugged amplifier is supplied in a hermetic aluminum housing with field-removavble female SMA connectors. It features a transistor-transistor-logic (TTL) controlled muting function capable of 200-ns on/off speed. The amplifier has an operating temperature range of -40 to +85C.

Microsemi Corp.
RF Integrated Solutions
3295 Scott Blvd., Ste. 150
Santa Clara, CA 95054
(408) 986-8031
FAX: (408) 988-8659
e-mail: [email protected]
www.microsemi.com/rfis

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