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    1. Technologies
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    GaN Amplifier Boosts 6 To 18 GHz

    June 13, 2012
    Model AML618P4015 is a gallium-nitride (GaN) power amplifier designed to provide 20 W output power from 6 to 18 GHz. The high-power-density amplifier achieves power-added efficiency (PAE) of typically 12% in a package measuring just 2.45 x 2.09 x 0.41 ...
    MWRF Staff
    Related To: Microwaves & RF
    Model AML618P4015 is a gallium-nitride (GaN) power amplifier designed to provide 20 W output power from 6 to 18 GHz. The high-power-density amplifier achieves power-added efficiency (PAE) of typically 12% in a package measuring just 2.45 x 2.09 x 0.41 in. It achieves 40-dB minimum small-signal gain across its full operating bandwidth and operates from a +32-VDC supply. The rugged amplifier is supplied in a hermetic aluminum housing with field-removavble female SMA connectors. It features a transistor-transistor-logic (TTL) controlled muting function capable of 200-ns on/off speed. The amplifier has an operating temperature range of -40 to +85C.

    Microsemi Corp.
    RF Integrated Solutions
    3295 Scott Blvd., Ste. 150
    Santa Clara, CA 95054
    (408) 986-8031
    FAX: (408) 988-8659
    e-mail: [email protected]
    www.microsemi.com/rfis

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