GaN Power Amplifier Boosts 225 To 1215 MHz

June 14, 2012
In an IMS exhibition floor noteworthy for its number of new GaN product announcements, RFMD showed its model RFHA1006 GaN power amplifier with high efficiency and flat gain across an instantaneous bandwidth of 225 to 1215 MHz. Suitable for ...

In an IMS exhibition floor noteworthy for its number of new GaN product announcements, RFMD showed its model RFHA1006 GaN power amplifier with high efficiency and flat gain across an instantaneous bandwidth of 225 to 1215 MHz. Suitable for continuous-wave (CW) and pulsed use, it is a good match for radar, wireless infrastructure, and two-way radios. The amplifier features an input-matched GaN transistor packaged in an air-cavity ceramic housing for excellent thermal stability and dissipation of heat. The amplifier requires external output impedance matching. It delivers 9 W (+39.5 dBm) output power from 225 to 1215 MHz with 16-dB gain. It is designed for use from a +28-VDC supply and achieves 60% power-added efficiency (PAE). For more on the model RFHA1006 GaN amplifier, visit RFMD at booth No. 1210.

About the Author

Jack Browne | Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.

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