GaN Power Amp Boosts 20 To 6000 MHz

Jan. 14, 2010
Model CMPA0060025F is a broadband gallium nitride (GaN) HEMT MMIC power amplifier from Cree with instantaneous bandwidth of 20 MHz to 6 GHz. It offers 12 dB power gain over that range and can operate with supply voltages to 50 V. The compact amplifier ...

Model CMPA0060025F is a broadband gallium nitride (GaN) HEMT MMIC power amplifier from Cree with instantaneous bandwidth of 20 MHz to 6 GHz. It offers 12 dB power gain over that range and can operate with supply voltages to 50 V. The compact amplifier fits within a 0.25-square-inch footprint and, according to Tom Dekker, the firm's Director of Sales and Marketing for RF Products, "The CMPA0060025F is a direct result of customer requests for a small, high-power, high-efficiency amplifier with performance through 6 GHz. It is designed to satisfy these requirements using Cree's proven GaN MMIC foundry process and the convenient package format found in our other GaN MMIC products. We have received excellent customer feedback for our existing GaN MMIC products and are excited to be expanding this product line while continuing to offer custom MMIC foundry services."

About the Author

Jack Browne | Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.

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