Freescale Launches 1-kW Device at MTT-S

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June 7, 2007

Freescale Semiconductor took the wraps off the world's highest-power LDMOS transistor at this week's MTT-S in Honolulu. The company's model MRF6VP11KH delivers 1 kW pulsed output power at 130 MHz. Designed for use from 10 to 150 MHz in magnetic resonance imaging (MRI) systems and plasma generators, the transistor features 65-percent drain efficiency and more than 27 dB gain. The 50-V device offers relatively high terminal impedances for ease of matching. It is supplied in a RoHS-compliant, air-cavity package with excellent thermal qualities. Freescale Semiconductor (www.freescale.com)

About the Author

Jack Browne

Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.