This article is part of our IMS 2023 coverage.
In IMS 2023 Booth 1316, you can get a glimpse of Gallium Semiconductor’s lineup of RF power amplifiers and discrete RF power transistors. For example, the GTH2r-1014150S is a pre-matched GaN-SiC L-band power amplifier that operates in the frequency range of 0.96-1.4 GHz. The device offers a pulsed output power of 150 W at 50-V bias, a saturated drain efficiency of over 72% (P2dB), and low pulse droop of only 0.02 dB, making it an excellent choice for high-power applications in L-band radar systems and satcom. It comes housed in a compact 6-pin, 6.5- × 7-mm DFN.
In addition to many other devices, Gallium Semi will display its amplifier evaluation board for the GTH2r-1014150S at 1.1-1.4 GHz. On the board is a Class AB amplifier circuit designed to demonstrate the amplifier in an optimal combination of output power and drain efficiency performance.
For more information, visit the company's website.
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