In the RF devices arena, Qorvo is first out of the gate with a fully integrated T/R front-end module (FEM) family capable of delivering up to 10 W of saturated RF transmit power in a small, 7 mm x 5 mm land-grid-array (LGA) package. Thanks to the company’s heterogeneous packaging techniques, these new devices provide the power density, reliability, and reduced size needed for next-generation X-band radar and surveillance platforms.
The flagship product, QPF5010, can generate 10 W of power, which is three times greater than the closest competitive solution, while operating between 8 and 12 GHz (X-band). At the same time, the QPF5010 delivers power-added efficiency (PAE) of 30-40%. That’s the result of using GaN and GaAs technology for the four functional blocks, including the T/R switch, power amplifier, low-noise amplifier, and limiter. Qorvo also offers pin-compatible 5-watt (QPF5005) and 2-watt (QPF5002) devices as part of the product family.
In the QPF5010, engineers will find a high-performance FEM in a compact size, making design, layout, assembly, and test easier to achieve. Thus, design cycles grow shorter as does time to market. With three different power ratings (10 W, 5 W, and 2 W) in the same package configuration, the family eliminates the need to create unique layouts for each power rating.
The integrated surface-mount technology (SMT) design also dramatically improves overall reliability, extending mean time between failures (MTBF) by eliminating many of the potential failure points inherent with discrete PCB alternatives. In addition, procurement and supply-chain challenges are reduced by a smaller bill of materials (BOM). The heterogenous multi-chip module (MCM) packaging capability can be extended to other frequency bands and applications as needed.