With an eye toward integrating digital content with analog trimming or data storage in next-generation 5G New Radio deployments, X-FAB Silicon Foundries has joined forces with Attopsemi to qualify the latter’s I-fuse one-time-programmable (OTP) IP on X-FAB’s XR013 130-nm RF-SOI process. As a result, designers can now incorporate a compact, robust OTP block into the core XR013 technology module, but without any additional or custom processing. With read operation possible at both 2.5 V and 1.8 V for MIPI compatibility, the collaboration satisfies the memory requirements of 5G technology.
X-FAB’s XR013 is an open-platform, 130-nm technology that’s optimized for RF applications including cellular infrastructure, Wi-Fi connectivity, automotive V2X communications, IoT, and more. A key benefit of using Attopsemi’s I-fuse OTP memory on the XR013 RF platform is the flexibility with which RF products can address different regional market requirements via a single chip design (as different configurations can be stored). This will lead to project development cost savings, as well as facilitating inventory management.
Attopsemi’s I-fuse, a fuse-based OTP technology, is said to be far more reliable with much smaller cell size and programming current than typical electrical-fuse technology. It limits programming current below a catastrophic breaking point as opposed to breaking a fuse, and uses a junction diode instead of MOS as a program selector in an OTP cell.
The qualified Attopsemi I-fuse OTP solution is available for clients from X-FAB’s customer portal.
X-FAB Silicon Foundries, www.xfab.com