CISSOID’s latest 3-phase SiC MOSFET intelligent power module (IPM) delivers an all-in-one solution for electric-vehicle inverter applications. This new IPM technology offers an all-in-one solution including a 3-Phase water-cooled SiC MOSFET module with built-in gate drivers.
Co-optimizing the electrical, mechanical, and thermal design of the power module and its proximity control, this new scalable platform will improve time-to-market for OEMs of electric vehicles and electric motor manufacturers seeking to rapidly adopt SiC-based inverters for more efficient and compact motor drives.
The first product built on this scalable platform, a 3-phase, 1200-V/450-A, SiC MOSFET IPM, features low conduction losses, with RDS(on) of 3.25 mΩ, and low switching losses of 8.3-mJ turn-on and 11.2-mJ turn-off energies, respectively, at 600 V/300 A. It reduces losses by at least a factor of 3 compared with state-of-the-art IGBT power modules. The new module is water-cooled through a lightweight AlSiC pin-fin baseplate for a junction-to-fluid thermal resistance of 0.15°C/W. The power module is rated for junction temperatures up to 175°C. The IPM withstands isolation voltages up to 3600 V (50 Hz, 1 min).
The built-in gate driver includes three on-board isolated power supplies (one per phase) with each delivering up to 5 W, enough to easily drive the power module up to 25 kHz at ambient temperatures up to 125°C. A peak gate current of up to 10 A and immunity to high dV/dt (>50 kV/µs) enable fast switching of the power module and low switching losses. Protection functions such as undervoltage lockout (UVLO), active Miller clamping (AMC), desaturation detection, and soft shutdown (SSD) ensure the safe drive and reliable operation of the power module in case of fault events.
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CISSOID, http://www.cissoid.com/