Gallium-nitride (GaN) MMICs are gaining ground in many high-frequency communications, radar, and satellite communications (satcom) applications, but efficient creation of new devices requires combining practical computer simulations with three-dimensional (3D) layout verifications.

To that end, Keysight Technologies has teamed with WIN Semiconductors Corp. to develop an efficient workflow that reduces the risk of developing GaN MMICs for a wide range of applications, including 5G, satcom, and defense radar systems. 

A failed tapeout can mean weeks lost to another foundry respin. The workflow devised by the partners connects on-chip, multi-domain simulation; 3D layout with verifications; and off-chip MMIC evaluation board design into a single environment. By automating the full set of simulation, optimization, and verification steps required to sign off on a MMIC design, it’s ensured that no analysis is skipped before the design goes to WIN Semiconductors’ foundry for fabrication. 

WIN Semiconductors’ latest NP 120P GaN Process Design Kit gives MMIC designers access to process models and layout rules. These models within Keysight Advanced Design System (ADS) and RF Circuit Simulation Professional automate the workflow to achieve first-pass MMIC tapeout.