Wireless technology is a large part of modern communications, requiring more bandwidth for growing numbers of users and functions. Much of the promise of 5G wireless cellular networks hinges on optimum use of available bandwidth, especially at millimeter-wave (mmWave) frequencies.
Effective radio networks will require efficient power amplification and NXP Semiconductors has recognized that a single semiconductor technology may not be enough for 5G. The semiconductor innovator is developing discrete and integrated device solutions for 5G based on three different in-house technologies: silicon (Si) LDMOS, gallium-nitride (GaN), and silicon-germanium (SiGe) processes. In addition to transistors and amplifiers, the firm has developed integrated multiple-input, multiple-output (MIMO) integrated antenna modules as part of efforts to reduce the size and costs of future wireless cellular base stations.