300-mm GeSi Wafers Hold 110-GHz Electro-Absorption Modules

A germanium-silicon electro-absorption modulator developed by imec operates beyond 110 GHz, enabling 400-Gb/s data rates per lane in a compact form factor.
Nov. 11, 2025
2 min read

Key Highlights

  • Operates at over 110 GHz with a net data rate of 400 Gb/s per lane, supporting high-speed data transfer needs.
  • Addresses challenges of existing modulators by offering compactness, high speed, and low power consumption through the Franz-Keldysh effect.
  • Integrates seamlessly on 300-mm silicon-photonics wafers, facilitating mass production and cost-effective deployment.
  • Ideal for short-distance optical links in AI, ML, and data-intensive applications requiring rapid, efficient data exchange.

imec demonstrated a germanium-silicon (GeSi) electro-absorption modulator (EAM) capable of operating past 110 GHz. Fabricated on its 300-mm GeSi wafers (see image above), the EAM achieves a net data rate of 400 Gb/s per lane in an extremely compact form factor for miniaturized applications.

The energy efficiency and fast communication rates of the EAM are a good fit for the demands of artificial intelligence (AI) and machine learning (ML) across diverse markets. It's expected to be a powerful addition to systems employing optical intensity modulation with direct detection (IM/DD) for short-distance, rapid transfers of copious quantities of data within commercial, industrial, and military systems. 

Cedric Bruynsteen, a researcher at the IDLab imec research group at Ghent University (Ghent, Belgium), explained, “Developing the right modulators to support these optical IM/DD links has been a major research focus, as commonly used technology options all have drawbacks.”

He noted some of the problems with current technology, “Thin-film lithium-niobate Mach-Zehnder modulators (MZMs), for instance, offer excellent linearity, low optical loss, and very high bandwidth, but their large footprint and contamination challenges hinder wafer-scale integration with advanced CMOS logic, challenging their use for future co-packaged optics and optical I/O.”

Bruynsteen added that energy efficiency is a further reason to pursue GeSi EAMs. “Micro-ring modulators, on the other hand, provide high integration density but require substantial stabilization control circuitry, which limits their energy efficiency.” 

He pointed out the value of the GeSi devices: “Our C-band GeSi EAM addresses these challenges head-on. By exploiting the Franz-Keldysh effect, it achieves compactness, high speed, and low power consumption. And thanks to its GeSi foundation, it integrates seamlessly on our 300-mm silicon photonics platform — enabling mass-market manufacturability.”

Despite being produced in high volumes, imec’s GeSi EAMs perform well enough to support the highest-speed optical interconnections over short distances for efficient processing of large-scale data.

About the Author

Jack Browne

Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.

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