GaN Transistor Pushes 500 W

May 23, 2013
This power transistor provides 500 W output power with short radar pulses from 1200 to 1400 MHz.

Internally impedance matched for optimum operation from 1200 to 1400 MHz, model MAGX-00214-500L00 is a high-power transistor with 500 W pulsed output power for L-band radar systems. Fabricated with gallium-nitride (GaN) on silicon carbide (SiC) device technology, this gold-metallized transistor achieves its rated output power with 300-μs pulses at a 10% duty cycle. It delivers 19.2-dB gain across the operating bandwidth with only 0.4-dB pulse droop and impressive 55% power-added efficiency (PAE). Designed for +50-VDC supplies, the RoHS-compliant transistor offers stable operation under extreme mismatch conditions with a projected mean time to failure (MTTF) of 600 years. The high-power GaN transistor is designed for operating temperatures from -40 to +95°C and is available in flange-mount and flangeless packages. According to Product Manager Paul Beasley, “The device is an ideal candidate for customers looking to upgrade L-band radar systems to the next level of pulsed power performance and experience the solid reliability that is offered by M/A-COM’s GaN Power Solutions.”

MACOM Technology Solutions, Inc., 100 Chelmsford St., Lowell, MA 01851; (800) 366-2266, (978) 656-2500,

About the Author

Jack Browne | Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.

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