Exploring The Promise of GaN-on-Si

March 27, 2013
Research is evaluating the possibility of growing GaN semiconductor materials on silicon as well as silicon-carbide (SiC) base materials.

Another organization attempting to drive down the cost of GaN semiconductor materials is the Singapore Agency for Science, Technology, and Research as part of its GaN-on-Si Programme. One of the goals of this project is to explore the major technology and cost limitations for manufacturing GaN wafers, and to evaluate the challenges in growing defect-free GaN on lower-cost silicon substrates due to mismatches, lattice issues, and thermal mismatches.

The research program seeks to combine the high-performance characteristics of GaN with the more economical manufacturing economies of silicon in two key areas: in power and in RF/microwave applications. It will also evaluate other materials, including sapphire and silicon carbide (SiC), as potential base materials for GaN semiconductor devices.

About the Author

Jack Browne | Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.

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