GaN-on-SiC Device Hoists 40 W at 3 GHz
Model XPT1015 is a +28-VDC GaN-on-silicon high-electronic-mobility-transistor (HEMT) power transistor from Nitronex Corp. capable of 40-W output power from DC to 2.5 GHz. The transistor, which is ideal for commercial, industrial, and military markets, ...