A trio of integrated-circuit (IC) products from RF Micro Devices earned recognition from a leading cable-television (CATV) publication for their contributions to that marketplace. Model RFAM2790 is a broadband amplifier that covers 45 to 1003 MHz for enhanced data rates for GSM evolution (EDGE) cellular applications. It provides as much as 27-dB gain with a maximum noise figure of 4 dB while consuming 410 mA current or less from a +12-VDC supply. With as much as +46 dBmV output power, the amplifier includes an attenuator to control gain over a range of 8 to 28 dB. The amplifier, which is supplied in an MCM package, meets DOCSIS 3.0 specifications with a 7-dB margin.
Model RFCM2680 is an amplifier/doubler that combines GaAs pHEMT and GaN HEMT die in a compact MCM housing. It covers 45 to 1003 MHz with 22.5-dB minimum gain at 1003 MHz and 4-dB maximum noise figure. It achieves +32-dBm output power at 1-dB compression with an output third-order intercept point (OIP3) of +49 dBm while consuming 430 mA or less from a +24-VDC supply. Finally, model RFPP2870 is a hybrid push/pull amplifier module in an SOT-115J package that incorporates GaAs MESFET, GaAs pHEMT, and GaN HEMT die. It operates from 40 to 1003 MHz with 28 dB at 1003 MHz and 5-dB maximum noise figure. It consumes 270 mA maximum current at +24 VDC.
