Freescale Launches First GaN Device

June 14, 2012
One of the leading suppliers of high-power RF/microwave transistors and amplifiers based on silicon LDMOS technology, Freescale Semiconductor, has announced its first power amplifier based on gallium-nitride (GaN) device technology. Model AFG25HW355S is ...

One of the leading suppliers of high-power RF/microwave transistors and amplifiers based on silicon LDMOS technology, Freescale Semiconductor, has announced its first power amplifier based on gallium-nitride (GaN) device technology. Model AFG25HW355S is a 350-W device that delivers +56-dBm peak output power from 2.3 to 2.7 GHz with 50% efficiency. It boasts 16-dB gain across that frequency range. The device is supplied in an NI-780 package. It is well suited for applications in cellular communications amplifiers, avionics, radar, and software-defined-radio (SDR) transmitters. The company already offers a wide range of silicon LDMOS products for use at 12, 28, and 50 V, as well as lower-voltage GaAs and silicon-germanium (SiGe) devices for use at frequencies to 100 GHz and higher.

Ritu Favre, Vice President and General Manager of Freescale's RF Division, notes: "Freescale's GaN RF power solutions underscore our technology-agnostic approach to the RF power market. Working with GaN in development since the mid-2000s, we have established an ideal blend of cost-efficiency, performance, and reliability, and the time is now right to add GaN-based products to our broad array of RF power amplifier solutions." To find out more about the company's new GaN device, and its various other high-power devices and amplifiers, visit Freescale Semiconductor at IMS booth No. 901.

About the Author

Jack Browne | Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.

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