High-Voltage GaN/SiC Transistor for L-Band Handles 10 kW
Presented as the first single high-voltage gallium-nitride/silicon-carbide (GaN/SiC) 150-V transistor, Integra Technologies' IGN1030S10000 produces 10 kW of pulsed saturated output power in the L-band, establishing a new benchmark for high-power RF transistor performance.
Compared to legacy high-power architectures, L-band typically requires power combining from multiple lower-power devices. By delivering 10 kW from a single 150-V HV GaN/SiC transistor, the IGN1030S10000 enables substantially simpler amplifier system architectures.
This high level of integration also reduces the size, cost, and complexity of high-power transmitter architectures, enabling smaller system volumes and increased system power density. The 150-V HV GaN/SiC technology can be used at other frequencies for high-power, high-performance applications.
Related Links:
More New Products
About the Author
Alix Paultre
Editor-at-Large, Microwaves & RF
Alix is Editor-at-Large for Microwaves & RF.
An Army veteran, Alix Paultre was a signals intelligence soldier on the East/West German border in the early ‘80s, and eventually wound up helping launch and run a publication on consumer electronics for the U.S. military stationed in Europe. Alix first began in this industry in 1998 at Electronic Products magazine, and since then has worked for a variety of publications, most recently as Editor-in-Chief of Power Systems Design.
Alix currently lives in Wiesbaden, Germany.