SOD-128 SiC Schottky Diodes Rated to 1,200 V
Offering low thermo-mechanical stress, lower capacitance, high maximum forward surge current, lower forward voltage, and smaller peak reverse current, Taiwan Semiconductor's latest automotive-grade, 1,200-V-rated SiC Schottky diodes are the first to come in 1-A and 2-A models in SOD-128 packages.
The reduced size and improved performance offered by these new, high-voltage, low-current, very fast, low-loss diodes address demanding applications. These include auxiliary power supplies, bias rectification, bootstrapping circuits, gate-driver bias supplies, snubbers, bleeder-clamp paths, PFC boost diodes in low-power designs, and secondary rectification in high-frequency flybacks.
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About the Author
Alix Paultre
Editor-at-Large, Microwaves & RF
Alix is Editor-at-Large for Microwaves & RF.
An Army veteran, Alix Paultre was a signals intelligence soldier on the East/West German border in the early ‘80s, and eventually wound up helping launch and run a publication on consumer electronics for the U.S. military stationed in Europe. Alix first began in this industry in 1998 at Electronic Products magazine, and since then has worked for a variety of publications, most recently as Editor-in-Chief of Power Systems Design.
Alix currently lives in Wiesbaden, Germany.