Blocking Caps Boost Power Amplifiers

June 5, 2013
A new line of rugged blocking capacitors offers the high-power rating needed to support high-power amplifier circuits.

Microwave transistors, such as those based on silicon carbide (SiC) and gallium nitride (GaN) substrate materials, continue to increase in power density, allowing RF/microwave amplifier designers genuine opportunities to assembly solid-state amplifiers that can provide output levels comparable to those possible with vacuum tube devices. But what is often lost in the design process is the availability of supporting passive components, such as blocking capacitors, that can operate at the power levels required by these newer high-power semiconductors. Fortunately, Dielectric Laboratories, a Dover Company, has made ongoing enhancements to its lines of blocking capacitors, recently introducing a new case size of 0.1100 x 0.1100 in. rated for 250 WVD and 200 W RF power. With a minimum capacitance value of 10,000 pF, these passive components are ideal companions for high-power SiC, GaN, and other high-frequency transistors in high-power RF/microwave solid-state amplifiers.

About the Author

Jack Browne | Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.

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