FETs Target WiMAX PAs From 2500 To 2700 MHz

May 13, 2008
TWO LDMOS RF power transistors have debuted for wireless-infrastructure applications in the 2.5-GHz-to-2.7- GHz frequency band. By providing peak output power of up to 170 W, these transistors should help designers simplify their RF ...

TWO LDMOS RF power transistors have debuted for wireless-infrastructure applications in the 2.5-GHz-to-2.7- GHz frequency band. By providing peak output power of up to 170 W, these transistors should help designers simplify their RF power-amplifier (PA) designs. Under WiMAX signal conditions, the PTFA260851E/F single-ended, 85-W FET typically features 14 dB gain and 22 percent efficiency at 16 W average output power. Its sibling, the PTFA261702E push-pull, 170-W FET, typically features 15 dB gain and 20 percent efficiency at 32 W average output power under WiMAX signal conditions. The transistor's architecture provides electrically isolated halves that ease use in Doherty PA applications. Operating at +28 VDC, these transistors include broadband internal matching. They are capable of handling a 10:1 VSWR at continuous-wave (CW) power output and +28-VDC supply voltage.

Infineon Technologies, 640 N. McCarthy Blvd., Milpitas, CA 95035; (866) 951-9519, Internet: www.infineon.com.

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About the Author

Nancy Friedrich | Editor-in-Chief

Nancy Friedrich began her career in technical publishing in 1998. After a stint with sister publication Electronic Design as Chief Copy Editor, Nancy worked as Managing Editor of Embedded Systems Development. She then became a Technology Editor at Wireless Systems Design, an offshoot of Microwaves & RF. Nancy has called the microwave space “home” since 2005.

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