Microwaves & RF
  • Resources
  • Directory
  • Webinars
  • White Papers
  • Video
  • Blogs
  • CAD Models
  • Advertise
    • Search
  • Top Stories
  • Products of the Week
  • Defense
  • Test
  • Components
  • Semiconductors
  • Embedded
  • Data Sheets
  • Topics
    - TechXchange Topics -- Markets -DefenseAutomotive- Technologies -Test & MeasurementComponentsCellular / 5G / 6G EDA
    Resources
    Top Stories of the WeekMWRF ResourcesDigital issuesEngineering AcademyWISESearch Data SheetsCompany DirectoryLibraryContributeSubscribe
    Advertise
    https://www.facebook.com/microwavesrf/
    https://www.linkedin.com/groups/3848060/profile
    https://twitter.com/MicrowavesRF
    https://www.youtube.com/channel/UCXKEiQ9dob20rIqTA7ONfJg
    1. Technologies
    2. Components

    16-W GaAs FETs Cover 6.4 To 8.5 GHz

    July 16, 2010
    The "EL" series of three galliumarsenide (GaAs) field-effect transistors (FETs) provides +42.5 dBm output power at 1-dB compression. The TIM6472-16EL operates from 6.4 to 7.2 GHz with 11.0 dB power gain at 1-dB compression and power-added ...
    Nancy Friedrich

    The "EL" series of three galliumarsenide (GaAs) field-effect transistors (FETs) provides +42.5 dBm output power at 1-dB compression. The TIM6472-16EL operates from 6.4 to 7.2 GHz with 11.0 dB power gain at 1-dB compression and power-added efficiency (PAE) of 37 percent. Its sibling, the TIM7179-16EL, covers 7.1 to 7.9 GHz. It typically provides 10.5 dB power gain at 1-dB compression with 37 percent PAE. Finally, the TIM7785-16EL spans 7.7 to 8.5 GHz while providing 10.0 dB of power gain (typical) at 1-dB compression. It offers PAE of 36 percent.

    Toshiba America Electronic Components, 19900 MacArthur Blvd., Suite 400, Irvine, CA 92612; (949) 623-2900, FAX: (949) 474-1300, Internet: www.toshiba.com/taec.

    See Associated Figure

    Continue Reading

    Four-Port Single-Sweep VNA Serves D- and G-Band Apps

    Laser and Glass Cell Create Non-Metallic, Atom-Based Microwave Antenna

    Sponsored Recommendations

    Near and Far Field Measurement

    Oct. 31, 2023

    S-parameters for High-frequency Circuit Simulations

    Oct. 31, 2023

    Common Mode Filter Chokes for High Speed Data Interfaces

    Oct. 31, 2023

    Simulation Model Considerations: Part I

    Oct. 31, 2023

    New

    The Move into mmWave Frequencies (Part 1)

    Wireless Technologies Boost Diverse Markets

    Products of the Week: December 4, 2023

    Most Read

    Empowering SOMs for IoT Devices with Matter Connectivity

    Products of the Week: July 10, 2023

    Engineering Potential: What Determines Success?

    Sponsored

    Introduction to the Metrology of VNA Measurement

    Making High-Frequency Balun Measurements

    Effective Use of VNA "Channels" for Efficient Measurement and Analysis

    Microwaves & RF
    https://www.facebook.com/microwavesrf/
    https://www.linkedin.com/groups/3848060/profile
    https://twitter.com/MicrowavesRF
    https://www.youtube.com/channel/UCXKEiQ9dob20rIqTA7ONfJg
    • About Us
    • Contact Us
    • Advertise
    • Do Not Sell or Share
    • Privacy & Cookie Policy
    • Terms of Service
    © 2023 Endeavor Business Media, LLC. All rights reserved.
    Endeavor Business Media Logo