16-W GaAs FETs Cover 6.4 To 8.5 GHz

July 16, 2010

The "EL" series of three galliumarsenide (GaAs) field-effect transistors (FETs) provides +42.5 dBm output power at 1-dB compression. The TIM6472-16EL operates from 6.4 to 7.2 GHz with 11.0 dB power gain at 1-dB compression and power-added efficiency (PAE) of 37 percent. Its sibling, the TIM7179-16EL, covers 7.1 to 7.9 GHz. It typically provides 10.5 dB power gain at 1-dB compression with 37 percent PAE. Finally, the TIM7785-16EL spans 7.7 to 8.5 GHz while providing 10.0 dB of power gain (typical) at 1-dB compression. It offers PAE of 36 percent.

Toshiba America Electronic Components, 19900 MacArthur Blvd., Suite 400, Irvine, CA 92612; (949) 623-2900, FAX: (949) 474-1300, Internet: www.toshiba.com/taec.

See Associated Figure

About the Author

Nancy Friedrich

RF Product Marketing Manager for Aerospace Defense, Keysight Technologies

Nancy Friedrich is RF Product Marketing Manager for Aerospace Defense at Keysight Technologies. Nancy Friedrich started a career in engineering media about two decades ago with a stint editing copy and writing news for Electronic Design. A few years later, she began writing full time as technology editor at Wireless Systems Design. In 2005, Nancy was named editor-in-chief of Microwaves & RF, a position she held (along with other positions as group content head) until 2018. Nancy then moved to a position at UBM, where she was editor-in-chief of Design News and content director for tradeshows including DesignCon, ESC, and the Smart Manufacturing shows.