TO TARGET MEDIUM-POWER Ku-band applications, a four-stage power amplifier (PA) provides 5 W of saturated output power. Dubbed the XP1058-BD, this gallium-arsenide (GaAs), monolithic-microwave-integrated-circuit (MMIC) PA achieves 27 dB small signal gain and +37 dBm saturated output power. The high-power amplifier uses a dual-sided bias architecture, covers 14.5 to 16 GHz, and achieves an output third-order intercept point of +44 dBm. The chip has surface passivation to protect and provide a rugged part. Backside via holes and gold metallization allow either a conductive epoxy or eutectic solder die attach process. The device is well suited for millimeter-wave military, radar, satellite, and weather applications. Samples and production quantities are available in four weeks.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, TX 77099; (281) 988-4600, Internet: www.mimixbroadband.com.
About the Author
Nancy Friedrich
RF Product Marketing Manager for Aerospace Defense, Keysight Technologies
Nancy Friedrich is RF Product Marketing Manager for Aerospace Defense at Keysight Technologies. Nancy Friedrich started a career in engineering media about two decades ago with a stint editing copy and writing news for Electronic Design. A few years later, she began writing full time as technology editor at Wireless Systems Design. In 2005, Nancy was named editor-in-chief of Microwaves & RF, a position she held (along with other positions as group content head) until 2018. Nancy then moved to a position at UBM, where she was editor-in-chief of Design News and content director for tradeshows including DesignCon, ESC, and the Smart Manufacturing shows.