TO TARGET MEDIUM-POWER Ku-band applications, a four-stage power amplifier (PA) provides 5 W of saturated output power. Dubbed the XP1058-BD, this gallium-arsenide (GaAs), monolithic-microwave-integrated-circuit (MMIC) PA achieves 27 dB small signal gain and +37 dBm saturated output power. The high-power amplifier uses a dual-sided bias architecture, covers 14.5 to 16 GHz, and achieves an output third-order intercept point of +44 dBm. The chip has surface passivation to protect and provide a rugged part. Backside via holes and gold metallization allow either a conductive epoxy or eutectic solder die attach process. The device is well suited for millimeter-wave military, radar, satellite, and weather applications. Samples and production quantities are available in four weeks.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, TX 77099; (281) 988-4600, Internet: www.mimixbroadband.com.
About the Author
Nancy FriedrichNancy Friedrich
RF Product Marketing Manager for Aerospace Defense, Keysight Technologies
Nancy Friedrich is RF Product Marketing Manager for Aerospace Defense at Keysight Technologies. Nancy Friedrich started a career in engineering media about two decades ago with a stint editing copy and writing news for Electronic Design. A few years later, she began writing full time as technology editor at Wireless Systems Design. In 2005, Nancy was named editor-in-chief of Microwaves & RF, a position she held (along with other positions as group content head) until 2018. Nancy then moved to a position at UBM, where she was editor-in-chief of Design News and content director for tradeshows including DesignCon, ESC, and the Smart Manufacturing shows.
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