The RF PIN diode as we know it today was invented by J. Nishizawa in 1950. Now, almost 70 years later, a new PIN diode concept—shielded-anode PIN diode (SAPIN)—has emerged. This new PIN diode offers 10 to 50 times better “OFF” isolation thanks to the introduction of a simple electrostatic shield. An “OFF” isolation greater than 40 dB at 2 GHz and 0 Vdc is achieved from a single series device. The theory of operation will be presented here along with measurements on fabricated silicon (Si)
Register to view the full article
Register to view the full article. By registering for Microwaves & RF now, you'll not only gain access to premium content, you'll also become part of an exclusive, robust global engineering community!
Participate in Expert and Reader driven Q&A's
Start your own conversation by commenting on any article or blog
Download high-quality content including the highly anticipated Salary & Career Report